DocumentCode :
2551542
Title :
Bridging the gap between TCAD and ECAD methodologies in deep sub-micron interconnect extraction and analysis
Author :
Nagaraj, N.S. ; Balsara, Poras ; Cantrell, Cyrus
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1999
fDate :
7-10 Jan 1999
Firstpage :
6
Lastpage :
11
Abstract :
Dominance of interconnect parasitics in impacting functionality, performance and reliability in deep sub-micron (DSM) designs is a well known topic. Reduced metal pitches, process variations, new materials for metallization/dielectrics emphasizes an increased need for “accurate” technology modeling of interconnect. In the mean time, continued design integration, increased chip sizes and market pressures call for faster but “accurate” EDA methodologies and tools. This tutorial provides a complete perspective of the TCAD interconnect modeling issues and how these could be addressed in ECAD methodologies and tools
Keywords :
VLSI; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; technology CAD (electronics); ECAD; TCAD; deep sub-micron interconnect; design integration; interconnect parasitics; metal pitches; process variations; reliability; technology modeling; Delay; Design methodology; Electronic design automation and methodology; Frequency; Integrated circuit interconnections; LAN interconnection; Performance analysis; Power system interconnection; Signal design; Signal synthesis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 1999. Proceedings. Twelfth International Conference On
Conference_Location :
Goa
ISSN :
1063-9667
Print_ISBN :
0-7695-0013-7
Type :
conf
DOI :
10.1109/ICVD.1999.745116
Filename :
745116
Link To Document :
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