Title :
DC-2 GHz low loss cryogenic InAs/AlSb HEMT switch
Author :
Ma, Bob Yintat ; Bergman, Joshua ; Hacker, Jonathan B. ; Sullivan, Gerard ; Sailer, Alan ; Brar, B.
Author_Institution :
Teledyne Sci. & Imaging, Thousand Oaks, CA, USA
Abstract :
A DC-2 GHz InAs/AlSb HEMT MMIC single pole double throw (SPDT) switch designed for cryogenic temperature has been fabricated and characterized. This switch is suitable for low RF power applications that require low insertion loss and high isolation. At 2 GHz, the SPDT switch demonstrated a typical low insertion loss of 0.7 dB at 300 K and 0.3 dB at 90 K. The isolation is greater than 40 dB for both temperatures. These results demonstrate the outstanding potential of ABCS HEMT technology for low loss SPDT switches for cryogenic temperature.
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; field effect transistor switches; indium compounds; microwave switches; ABCS HEMT technology; HEMT MMIC single pole double throw switch; InAs-AlSb; SPDT switch; cryogenic temperature; frequency 0 GHz to 2 GHz; insertion loss; low loss cryogenic HEMT switch; temperature 300 K; temperature 90 K; Communication switching; Cryogenics; Electron mobility; HEMTs; Insertion loss; Isolation technology; MMICs; Power semiconductor switches; Radio frequency; Temperature; ABCS; HEMT; InAs/AlSb HFET; MMIC; SPDT; antimonide-based compound semiconductor; single pole double pole; switch;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165730
