Ka band high power AlGaAs PIN diode switches

Author

Rozbicki, Andrzej ; Brogle, James ; Jain, Nitin ; Boles, Timothy ; Hoag, David

Author_Institution

MA-COM Technol. Solutions, Cobham Co., Lowell, MA, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

453

Lastpage

456

Abstract

In this paper we present the design and performance of millimeter wave MMIC switches in the patented MA-COM AlGaAs heterojunction PIN Diode process that allow us to produce high power and low insertion loss devices. The design process from a reflective SPDT switch to a non-reflective version of the switch, with intense use of HFSS and ADS software, is presented. These switches were designed to meet demanding requirements: low insertion loss less than 0.8 dB, 40 dBm peak power and 37 dBm CW power, and 30 dB isolation.

Keywords

MMIC; aluminium compounds; gallium compounds; microwave switches; p-i-n diodes; ADS software; AlGaAs; HFSS software; Ka band high power PIN diode switches; SPDT switch; millimeter wave MMIC switches; patented MA-COM heterojunction PIN Diode process; Anodes; Circuits; Gallium arsenide; Heterojunctions; Insertion loss; MMICs; Millimeter wave technology; Semiconductor diodes; Switches; Telecommunication switching; AlGaAs; Ka Band; PIN diode; monolithic microwave integrated circuit; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165731

Filename

5165731