• DocumentCode
    2551637
  • Title

    Liquid metal vertical interconnects for RF flip-chip assembly

  • Author

    Wood, Joseph ; Vummidi, Krishna ; Ralston, Parrish ; Chen, Lihan ; Barker, N. Scott ; Raman, Sanjay

  • Author_Institution
    Virginia Tech, Wireless Microsyst. Lab., Blacksburg, VA, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Firstpage
    461
  • Lastpage
    464
  • Abstract
    This paper describes a new process for using room temperature liquid metals as the interconnect material for flip chip bonding. The proposed liquid metal interconnects are not susceptible to damage caused by thermo-mechanical stress and are therefore an attractive alternative to solid phase solder bumps. A new interconnect structure is presented involving a patterned underfill dielectric material to contain the liquid metal on the bottom carrier, and electroplated pins on the top chip to mate with the socket and make contact with the liquid metal. RF and DC measurements were performed on the liquid metal transition showing an insertion loss of <0.5dB up to 20 GHz.
  • Keywords
    assembling; dielectric materials; flip-chip devices; liquid metals; RF flip-chip assembly; dielectric material; flip chip bonding; interconnect material; liquid metal vertical interconnects; room temperature liquid metals; solid phase solder bumps; thermo-mechanical stress; Assembly; Bonding; Dielectric loss measurement; Dielectric materials; Flip chip; Inorganic materials; Radio frequency; Temperature; Thermal stresses; Thermomechanical processes; Coplanar Waveguides; Flip-Chip; Gallium Alloys; Interconnects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
  • Conference_Location
    Boston, MA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-2803-8
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2009.5165733
  • Filename
    5165733