DocumentCode
2551637
Title
Liquid metal vertical interconnects for RF flip-chip assembly
Author
Wood, Joseph ; Vummidi, Krishna ; Ralston, Parrish ; Chen, Lihan ; Barker, N. Scott ; Raman, Sanjay
Author_Institution
Virginia Tech, Wireless Microsyst. Lab., Blacksburg, VA, USA
fYear
2009
fDate
7-12 June 2009
Firstpage
461
Lastpage
464
Abstract
This paper describes a new process for using room temperature liquid metals as the interconnect material for flip chip bonding. The proposed liquid metal interconnects are not susceptible to damage caused by thermo-mechanical stress and are therefore an attractive alternative to solid phase solder bumps. A new interconnect structure is presented involving a patterned underfill dielectric material to contain the liquid metal on the bottom carrier, and electroplated pins on the top chip to mate with the socket and make contact with the liquid metal. RF and DC measurements were performed on the liquid metal transition showing an insertion loss of <0.5dB up to 20 GHz.
Keywords
assembling; dielectric materials; flip-chip devices; liquid metals; RF flip-chip assembly; dielectric material; flip chip bonding; interconnect material; liquid metal vertical interconnects; room temperature liquid metals; solid phase solder bumps; thermo-mechanical stress; Assembly; Bonding; Dielectric loss measurement; Dielectric materials; Flip chip; Inorganic materials; Radio frequency; Temperature; Thermal stresses; Thermomechanical processes; Coplanar Waveguides; Flip-Chip; Gallium Alloys; Interconnects;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location
Boston, MA
ISSN
0149-645X
Print_ISBN
978-1-4244-2803-8
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2009.5165733
Filename
5165733
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