A new multi-valued static random access memory (MVSRAM) with hybrid circuit consisting of single-electron (SE) and MOSFET

Author

Yu, Y.S. ; Kye, H.W. ; Song, B.N. ; Kim, S.J. ; Choi, J.B.

Author_Institution

Dept. of Inf. & Control Eng., Hankyong Nat. Univ., Anseong

fYear

2006

fDate

21-24 May 2006

Lastpage

4578

Abstract

A new multi-valued static random access memory (MVSRAM) cell with a hybrid circuit consisting of single-electron (SE) and MOSFETs is proposed. The previously reported MVSRAM with SE-MOSFET hybrid circuit needs two data lines, one bit line (BL) for write operations and one sense line (SL) for read operations, to improve the speed of the read-out operation, but the proposed cell has only one data line for read/write operations, resulting in a memory area that is much smaller than that of the previous cell, without any reduction of read-out speed

Keywords

MOSFET circuits; SRAM chips; multivalued logic; single electron transistors; MOSFET; bit line; data lines; hybrid circuit; multivalued static random access memory; read operations; sense line; single electron transistors; write operations; Capacitance; Low voltage; MOSFET circuits; Multivalued logic; Physics; Random access memory; Read-write memory; SRAM chips; Single electron transistors; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Conference_Location

Island of Kos

Print_ISBN

0-7803-9389-9

Type

conf

DOI

10.1109/ISCAS.2006.1693648

Filename

1693648