Title :
Spectral characteristics of low threshold microdisks
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Abstract :
Semiconductor microdisks present a device with interesting physics but without an obvious practical application. The ´conventional´ microdisk structure uses a pedestal to hold the boundary of a semiconductor disk in air leading to essentially a parallel array of edge emitters. We form disks by epitaxial lift-off which opens up several possibilities, as, in the use of a disk as an evanescent wave, in plane waveguide filter in silica based waveguides or as arrays of vertical emitters by placing the disks on reflectors. Arrays are of thin (150-700 nm) semiconductor (InGaAsP, /spl lambda/g = 1.55 /spl mu/m at room temperature) disks and rings on glass substrates. To date work has concentrated on disk thickness < /spl lambda//2n due to the microcavity effect of enhanced coupling of spontaneous emission to waveguide modes. We have measured lasing in disks with thickness significantly greater than /spl lambda//2n.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; photoluminescence; quantum well lasers; semiconductor laser arrays; spontaneous emission; waveguide lasers; 1.55 mum; 150 to 700 nm; InGaAsP; arrays; epitaxial lift-off; evanescent wave; glass substrates; low threshold microdisks; microcavity effect; photoluminescence; plane waveguide filter; rings; silica based waveguides; spectral characteristics; spontaneous emission; vertical emitters; waveguide modes; Filters; Glass; Lead compounds; Microcavities; Physics; Planar waveguides; Semiconductor waveguides; Silicon compounds; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571620