• DocumentCode
    2551688
  • Title

    Recent improvements of crystalline silicon solar cells in Japan

  • Author

    Saitoh, Tadashi ; Shimokawa, Ryuichi ; Hayashi, Yutaka

  • Author_Institution
    Tokyo Univ. of Agric. & Technol., Japan
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1026
  • Abstract
    Fundamental research on the recombination of minority carriers at Si/SiO2 interfaces and grain boundaries is discussed. Qualities of feedstock and cast ingots are improved. Large-area cell efficiencies using CZ single and cast polycrystalline substrates are improved to 19.5 and 16.4%. The high values are achieved by using low-cost cell fabrication processes. Fundamental and preliminary research into the realization of very-high-efficiency solar cells has been initiated
  • Keywords
    electron-hole recombination; elemental semiconductors; grain boundaries; minority carriers; silicon; solar cells; 16.4 percent; 19.5 percent; Japan; Si-SiO2; cast ingots; cast polycrystalline substrates; crystalline Si solar cells; feedstock quality; grain boundaries; minority carriers recombination; Crystallization; Grain boundaries; Impurities; Photoconductivity; Photovoltaic cells; Radiative recombination; Research and development; Silicon; Substrates; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169365
  • Filename
    169365