DocumentCode
2551688
Title
Recent improvements of crystalline silicon solar cells in Japan
Author
Saitoh, Tadashi ; Shimokawa, Ryuichi ; Hayashi, Yutaka
Author_Institution
Tokyo Univ. of Agric. & Technol., Japan
fYear
1991
fDate
7-11 Oct 1991
Firstpage
1026
Abstract
Fundamental research on the recombination of minority carriers at Si/SiO2 interfaces and grain boundaries is discussed. Qualities of feedstock and cast ingots are improved. Large-area cell efficiencies using CZ single and cast polycrystalline substrates are improved to 19.5 and 16.4%. The high values are achieved by using low-cost cell fabrication processes. Fundamental and preliminary research into the realization of very-high-efficiency solar cells has been initiated
Keywords
electron-hole recombination; elemental semiconductors; grain boundaries; minority carriers; silicon; solar cells; 16.4 percent; 19.5 percent; Japan; Si-SiO2; cast ingots; cast polycrystalline substrates; crystalline Si solar cells; feedstock quality; grain boundaries; minority carriers recombination; Crystallization; Grain boundaries; Impurities; Photoconductivity; Photovoltaic cells; Radiative recombination; Research and development; Silicon; Substrates; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169365
Filename
169365
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