Approximation of non-zero transistor ON resistance in class-E amplifiers

Author

Ho, C.K. ; Wong, H. ; Ma, S.W.

Author_Institution

Dept. of Electron. Eng., City Univ., Hong Kong, China

Volume

1

fYear

2004

fDate

3-5 Nov. 2004

Firstpage

90

Lastpage

93

Abstract

This work aims to develop accurate design formulae for class E power amplifier designs by considering the non-zero transistor "ON" resistance. With this consideration, the output characteristics of the amplifier can be approximated more accurately. Based on the derived analytical formulas, several class E amplifiers with operation frequency ranging from 100 kHz to 900 MHz were designed. The calculated characteristics of the amplifiers were validated with PSpice and Microwave Office simulations and experimental results. Good agreements were obtained.

Keywords

HF amplifiers; SPICE; UHF power amplifiers; circuit simulation; 0.1 to 900 MHz; Microwave Office simulation; PSpice simulation; class E power amplifier; nonzero transistor ON resistance; output characteristics; Circuit analysis; Cities and towns; Design engineering; Frequency; Inductors; Microwave transistors; Power amplifiers; Power engineering and energy; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on

Print_ISBN

0-7803-8777-5

Type

conf

DOI

10.1109/ICCDCS.2004.1393360

Filename

1393360