Comparison between nonlinear characteristics of n-channel and p-channel FD SOI MOSFETs

The nonlinear characteristics of NMOSFET and PMOSFET are of prime importance in the performance analysis of analog applications of transistors and circuits fabricated with CMOS technology, because these transistors have different physical principles of operation. NMOSFET channel is in inversion, while the PMOSFET channel is in accumulation. In this paper we present a comparison between nonlinear characteristics of fully depleted (FD) SOI NMOSFET and SOI PMOSFET, as function of transistor parameters and operation regime. Advantages of one type over the other depend of the operation regime and the channel length.