DocumentCode
2551933
Title
Validation of a statistical non-linear model of GaAs HEMT MMIC´s by hypothesis testing and principal components analysis
Author
Balsi, M. ; Centurelli, F. ; Marietti, P. ; Scotti, G. ; Tommasino, P. ; Trifiletti, A. ; Valente, G.
Author_Institution
Dipt. di Ingegneria Elettronica, Universita di Roma "La Sapienza", Rome
fYear
2006
fDate
21-24 May 2006
Lastpage
4638
Abstract
A distance-dependent non-linear statistical model of the active part of a very short-length HEMT-based MMIC, expressed in terms of principal components, is presented. A statistical model has been extracted for 0.1 mum GaAs HEMT devices and MMIC´s. Validation of the model is presented, based on principal component analysis and statistical hypothesis testing
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC; gallium arsenide; integrated circuit modelling; principal component analysis; 0.1 micron; GaAs; HEMT MMIC; distance dependent model; high electron mobility transistor; principal components analysis; statistical hypothesis testing; statistical nonlinear model; Covariance matrix; Gallium arsenide; HEMTs; MMICs; Measurement standards; Principal component analysis; Random variables; Scattering parameters; Statistical distributions; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location
Island of Kos
Print_ISBN
0-7803-9389-9
Type
conf
DOI
10.1109/ISCAS.2006.1693663
Filename
1693663
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