Title :
Wideband medium power amplifiers using a short gate-length GaAs MMIC process
Author :
Morgan, Matthew ; Bryerton, Eric ; Karimy, Hamid ; Dugas, Douglas ; Gunter, Liberty ; Duh, Kuanghann ; Yang, Xiaoping ; Smith, Phillip ; Chao, Pane-Chane
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
We present the design of several wideband, millimeter-wave, MMIC, medium power amplifiers using a newly developed high-power, high-yield, 70 nm gate-length GaAs MMIC pHEMT process. These amplifiers cover a range of about 65-125 GHz, and were designed for the purpose of driving sub-millimeter wave multipliers in the local oscillator subsystem of the Atacama Large Millimeter Array (ALMA) radio telescope. The highest-frequency amplifiers in this chipset have average output power density over wide bandwidth of 200 mW/mm, representing the best performance to date for GaAs pHEMTs above W-Band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MIMIC; gallium arsenide; millimetre wave amplifiers; radiotelescopes; wideband amplifiers; GaAs; MIMIC; frequency 65 GHz to 125 GHz; millimetre wave amplifiers; pHEMT process; radio telescope; size 70 nm; sub-millimeter wave multipliers; wideband amplifiers; Broadband amplifiers; Gallium arsenide; High power amplifiers; Local oscillators; MMICs; Optical design; PHEMTs; Power amplifiers; Power generation; Radio astronomy; Broadband amplifiers; MMIC amplifiers; millimeter wave power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165753
