Differences in the laser annealing of a-Si:H and a-SiC films

Author

García, B. ; Estrada, M. ; Cruz-Gandarilla, F. ; Carreño, M. N P ; Pereyra, I.

Author_Institution

Depto. Ingenieria Electrica, Instituto Politecnico Nacional, Mexico, Mexico

Volume

1

fYear

2004

fDate

3-5 Nov. 2004

Firstpage

164

Lastpage

167

Abstract

In this paper we compare differences in particle size, surface roughness, resistivity and X-ray diffraction pattern observed in a-Si:C and a-Si_0.5C_0.5 layers crystallized by excimer (KrF) laser annealing (ELA), under similar conditions. The characteristics of the crystallized films are interpreted considering the difference in melting temperature and thermal coefficient of both materials. Looking toward reducing surface roughness, a comparison of poly-Si layer characteristics, when ELA is done directly and through a SiO₂ layer, is also shown.

Keywords

X-ray diffraction; amorphous semiconductors; crystallisation; electrical resistivity; hydrogen; laser beam annealing; particle size; semiconductor thin films; silicon compounds; surface roughness; wide band gap semiconductors; ELA; Si:H; Si_0.5C_0.5; SiC; SiO₂; X-ray diffraction pattern; a-Si:H films; a-SiC films; electrical resistivity; excimer laser annealing; laser beam annealing; particle size; poly-Si layer characteristics; surface roughness; Annealing; Conductivity; Crystalline materials; Crystallization; Rough surfaces; Surface emitting lasers; Surface roughness; Temperature; X-ray diffraction; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on

Print_ISBN

0-7803-8777-5

Type

conf

DOI

10.1109/ICCDCS.2004.1393374

Filename

1393374