Title :
Room-temperature mid-IR semiconductor lasers
Author :
Malin, J.I. ; Felix, C.L. ; Meyer, J.R. ; Hoffman, C.A. ; Pinto, J.F. ; Lin, C.-H. ; Chang, P.C. ; Murry, S.J. ; Yang, R.Q. ; Pei, S.-S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Summary form only given. Here we present results for a short-wavelength type II quantum well laser (T2QWL) structure which exhibits lasing up to temperatures well above ambient. Until now, only the intersubband-based quantum cascade laser had displayed stimulated emission at 3 /spl mu/m above 300 K. An undoped InAs-GaInSb-InAs-AlSb MQW wafer was grown by MBE.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; stimulated emission; 290 K; 3 mum; InAs-GaInSb-InAs-AlSb; MBE; intersubband-based quantum cascade laser; room-temperature mid-IR semiconductor lasers; short-wavelength type II quantum well laser; stimulated emission; undoped InAs-GaInSb-InAs-AlSb MQW wafer; Chemical lasers; Chemical processes; Optical design; Optical pumping; Power generation; Pump lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571622
