Room-temperature mid-IR semiconductor lasers

Author

Malin, J.I. ; Felix, C.L. ; Meyer, J.R. ; Hoffman, C.A. ; Pinto, J.F. ; Lin, C.-H. ; Chang, P.C. ; Murry, S.J. ; Yang, R.Q. ; Pei, S.-S.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

201

Abstract

Summary form only given. Here we present results for a short-wavelength type II quantum well laser (T2QWL) structure which exhibits lasing up to temperatures well above ambient. Until now, only the intersubband-based quantum cascade laser had displayed stimulated emission at 3 /spl mu/m above 300 K. An undoped InAs-GaInSb-InAs-AlSb MQW wafer was grown by MBE.

Keywords

III-V semiconductors; gallium compounds; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; stimulated emission; 290 K; 3 mum; InAs-GaInSb-InAs-AlSb; MBE; intersubband-based quantum cascade laser; room-temperature mid-IR semiconductor lasers; short-wavelength type II quantum well laser; stimulated emission; undoped InAs-GaInSb-InAs-AlSb MQW wafer; Chemical lasers; Chemical processes; Optical design; Optical pumping; Power generation; Pump lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571622

Filename

571622