Title :
Ultra low-power bulk and gate-driven, class AB, sub-threshold transconductor
Author :
Sharan, Tripurari ; Bhadauria, Vijaya
Author_Institution :
Electron. & Commun. Eng. Dept., Motilal Nehru Nat. Inst. of Technol., Allahabad, India
Abstract :
Operational Transconductance Amplifier (OTA), is a main building block of analog signal systems. This paper presents a novel low-voltage and low-power rail-to-rail wide linear range OTA, operating in weak inversion region. The bulk and source-degenerated input stage provides, rail-to-rail input and output signal swings, whereas the class AB flipped voltage follower generates the bias current for the input stage. To enhance the current drive capability, a positive feedback has been employed at gates of input transistors. The OTA uses a single 0.5 V supply and dissipates 32 nW power to provide 38 dB gain and 50 kHz gain bandwidth product. The Cadence VIRTUOSO environment using UMC 0.18 μm CMOS process technology has been used to simulate the proposed circuit. Simulation results showed that the circuit exhibits less than -52 dB total harmonic distortions, for 100 mV(p-p) signal at 200 Hz frequency in its unity gain configuration.
Keywords :
CMOS analogue integrated circuits; MOSFET; feedback amplifiers; harmonic distortion; low-power electronics; operational amplifiers; Cadence VIRTUOSO environment; UMC CMOS process technology; analog signal system; bandwidth 50 kHz; class AB flipped voltage follower generation; current drive capability; frequency 200 Hz; gain 38 dB; harmonic distortion; low-voltage low-power rail-to-rail wide linear range OTA; operational transconductance amplifier; positive feedback; power 32 nW; size 0.18 mum; source-degenerated input stage; transistor; ultralow-power bulk gate-driven class ab subthreshold transconductor; voltage 0.5 V; voltage 100 mV; weak inversion region; Capacitors; Gain; Logic gates; MOSFET; Resistors; Threshold voltage; Transconductance; Bulk-driven; Low power; Operational transconductance amplifier (OTA); Weak inversion; flipped voltage follower (FVF); gate regeneration; source degeneration;
Conference_Titel :
Signal Processing and Integrated Networks (SPIN), 2015 2nd International Conference on
Conference_Location :
Noida
Print_ISBN :
978-1-4799-5990-7
DOI :
10.1109/SPIN.2015.7095336