Improvement of phosphorus gettered multicrystalline silicon wafers by aluminum treatment

Author

Pasquinelli, M. ; Martinuzzi, S. ; Natoli, J.Y. ; Floret, F.

Author_Institution

Lab. de Photoelectr. des Semi-Conducteurs, Faculte des Sci. et Techniques de Marseille, France

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1035

Abstract

In thin multicrystalline silicon cells (d<200 mm), previously improved by phosphorus gettering, a back surface field (BSF) is necessary. The BSF could be obtained by aluminum alloying and diffusion. Samples gettered for a long time are markedly improved during the annealing of the Si-Al structure at 800°C for 30 min, and L _n overpass the thickness of the samples. Although the influence of an additional gettering effect is not precluded, it is emphasized that the aluminum treatment results in the hydrogenation of the wafer

Keywords

aluminium; annealing; elemental semiconductors; getters; phosphorus; silicon; solar cells; 30 min; 800 degC; Si:Al; aluminum alloying; annealing; back surface field; diffusion; hydrogenation; phosphorus gettered multicrystalline silicon wafers; thin multicrystalline solar cells; Aluminum; Annealing; Argon; Artificial intelligence; Electrons; Gettering; Ohmic contacts; Silicon; Surface treatment; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169368

Filename

169368