Title :
Dual channel WDM source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD
Author :
Osowski, M.L. ; Lammert, R.M. ; Coleman, J.J.
Author_Institution :
Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
In this talk, we present the design, fabrication and device results of a InGaAs-GaAs-AlGaAs strained QW dual-channel WDM source with monolithically integrated electroabsorption modulators and y-junction coupler by selective-area MOCVD. We show a schematic diagram of the dual-channel device.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical couplers; optical fabrication; optical transmitters; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; wavelength division multiplexing; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs strained QW dual-channel WDM source; Y-junction coupler; dual channel WDM source; monolithically integrated electroabsorption modulators; optical design; optical fabrication; schematic diagram; selective-area MOCVD; Chemical lasers; Laboratories; Laser tuning; MOCVD; Optical coupling; Optical device fabrication; Optical modulation; Optical waveguides; Quantum well lasers; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571623
