Title :
Proposal of an AlAs-oxide current confinement structure for GaInAs/AlGaInAs long wavelength surface emitting lasers
Author :
Ohmoki, N. ; Hatori, N. ; Mizutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan
Abstract :
In this paper, we propose a novel long-wavelength VCSEL with an oxidized AlAs confinement structure which is grown on an InP substrate. We expect the proposed structure will provide a threshold reduction and a high temperature operation of long wavelength VCSELs. We present some characteristics of AlAs oxidation on InP substrates and demonstrate GaInAs-AlGaInAs edge emitting lasers (/spl Lambda/=1.65 /spl mu/m) with the AlAs-oxide current confinement for the first time.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; oxidation; quantum well lasers; semiconductor growth; substrates; surface emitting lasers; vapour phase epitaxial growth; 1.65 mum; AlAs oxidation; AlAs-oxide current confinement; AlAs-oxide current confinement structure; GaInAs-AlGaInAs; GaInAs-AlGaInAs edge emitting lasers; GaInAs/AlGaInAs long wavelength surface emitting lasers; InP; InP substrate; InP substrates; high temperature operation; long wavelength VCSELs; long-wavelength VCSEL; oxidized AlAs confinement structure; threshold reduction; Carrier confinement; Distributed Bragg reflectors; Electrons; Indium gallium arsenide; Oxidation; Proposals; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571624
