DocumentCode
2553023
Title
A case study for reliability-aware in SoC analog circuit design
Author
Latif, Mohd Azman Abdul ; Ali, Noohul Basheer Zain ; Hussin, Fawnizu Azmadi
Author_Institution
Intel Corp., Penang, Malaysia
fYear
2010
fDate
15-17 June 2010
Firstpage
1
Lastpage
6
Abstract
This paper provides a working knowledge of Negative Bias Temperature Instability (NBTI) awareness to the circuit design community for reliable design of the System-On-a-Chip (SoC) analog circuit. The reliability performance of all matched pair circuits, such as Bandgap Reference, is at the mercy of aging differential. Aging simulation (AgingSim) is mandatory to obtain realistic risk evaluation for circuit design reliability qualification. It is applicable to all circuit aging problems covering both analog and digital. Failure rate varies as a function of voltage and temperature. It is shown that PMOS is the reliability-critical device and NBTI is the most critical failure mechanism for analog circuit performance in sub-micrometer CMOS technology. We provide a complete reliability simulation analysis of Thermal Sensor DAC and analyze the effect of NBTI using aging simulation tool.
Keywords
analogue circuits; integrated circuit design; integrated circuit reliability; system-on-chip; AgingSim; NBTI awareness; PMOS; SoC analog circuit design; aging differential; aging simulation tool; analog circuit performance; bandgap reference; circuit aging problem; circuit design community; circuit design reliability; critical failure mechanism; failure rate; negative bias temperature instability; realistic risk evaluation; reliability critical device; reliability simulation analysis; submicrometer CMOS technology; system-on-a-chip analog circuit; thermal sensor DAC; Aging; Analog circuits; Degradation; Reliability; Stress; Temperature sensors; Aging; Analog; Circuit Reliability; Negative Bias Temperature Instability (NBTI); systems-on-a-chip (SoC);
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent and Advanced Systems (ICIAS), 2010 International Conference on
Conference_Location
Kuala Lumpur, Malaysia
Print_ISBN
978-1-4244-6623-8
Type
conf
DOI
10.1109/ICIAS.2010.5716255
Filename
5716255
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