DocumentCode :
2553055
Title :
Time optimized implantation modeling for accurate process simulation
Author :
Sankar, G. Kulathu ; Pal, Deb Kumar ; Tee, Elizabeth Kho Ching ; Hua, Tia Swee
Author_Institution :
X-FAB Sarawak Sdn. Bhd., Kuching
fYear :
2008
fDate :
25-27 Nov. 2008
Firstpage :
38
Lastpage :
39
Abstract :
In this work an attempt is made to extract Dual Pearson moments from 1-D Monte Carlo simulated profiles, and these moments are used for 2-D simulations. This approach gives same accurate implant profile as Monte Carlo, but simulation time is significantly reduced.
Keywords :
Monte Carlo methods; ion implantation; semiconductor process modelling; 1D Monte Carlo simulated profiles; 2D simulations; accurate process simulation; extract dual Pearson moments; time optimized implantation modeling; Implants; Monte Carlo methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
Type :
conf
DOI :
10.1109/SMELEC.2008.4770272
Filename :
4770272
Link To Document :
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