Title :
CNTFET-based design of dynamic ternary full adder cell
Author :
Murotiya, S.L. ; Gupta, A. ; Vasishth, S.
Author_Institution :
Electr. & Electron. Dept., Birla Inst. of Technol. & Sci., Pilani, India
Abstract :
This paper proposes a novel CNTFET-based design of ternary full adder (TFA) cell using dynamic logic style. The proposed TFA is designed based on the conventional CMOS architecture with utilization of inherent binary nature (0, 1) of input carry signal. Since voltage at the output of the dynamic circuit is stored on a parasitic capacitance, a ternary keeper is used in order to alleviate charge sharing problems. The proposed TFA cell is evaluated using HSPICE simulator with 32nm Stanford CNTFET model in various test conditions and at different power supply voltages. The proposed design with output buffer achieves significant improvements in terms of speed, power dissipation and driving capability with respect to other state-of-the-art TFA cells. At 0.9 V, the proposed TFA cell shows 78% reduction in power delay product in comparison to a CNTFET based TFA cell, recently proposed in the literature.
Keywords :
adders; carbon nanotube field effect transistors; field effect transistor circuits; logic design; ternary logic; CMOS architecture; CNTFET-based design; HSPICE simulator; TFA; charge sharing problems; dynamic logic style; dynamic ternary full adder cell; input carry signal; output buffer; parasitic capacitance; power delay product; power dissipation; power supply voltages; size 32 nm; ternary keeper; test conditions; voltage 0.9 V; Adders; CNTFETs; Computer architecture; Delays; Logic gates; Microprocessors; carbon nano tube (CNT) field effect transistor (CNTFET); dynamic Logic; power-delay product (PDP); ternary Full adder (TFA); ternary Logic;
Conference_Titel :
India Conference (INDICON), 2014 Annual IEEE
Conference_Location :
Pune
Print_ISBN :
978-1-4799-5362-2
DOI :
10.1109/INDICON.2014.7030403