Title :
Low-power high-tuning range CMOS ring oscillator VCOs
Author :
Parvizi, Mahdi ; Khodabakhsh, Amir ; Nabavi, A.
Author_Institution :
Dept. of Electr. Eng., Tarbiat Modares Univ., Tehran
Abstract :
This paper presents the design of two new ring oscillators based on differential and single-ended topologies using a 0.13 mum 1P8M CMOS technology. The differential oscillator utilizes feed-forward technique and a new composite load with inductive impedance, reducing the delay per stage and widening the tuning range. The output frequency ranges from 0.5 to 9.5 GHz and the circuit consumes only 9 mW. The simulation result of phase noise is -85.3 dBc/Hz @ 1 MHz offset from centre frequency. The single-ended ring oscillator with inductive composite load oscillates from 6.3 to 13.9 GHz and consumes only 5.1 mW with phase noise of -81.5 dBc/Hz @ 1 MHz offset from centre frequency.
Keywords :
CMOS integrated circuits; UHF oscillators; circuit tuning; microwave oscillators; phase noise; voltage-controlled oscillators; 1P8M CMOS technology; VCO; circuit tuning; composite load; feed-forward technique; frequency 0.5 GHz to 9.5 GHz; frequency 1 MHz; frequency 6.3 GHz to 13.9 GHz; inductive impedance; phase noise; power 5.1 mW; power 9 mW; single-ended ring oscillator; size 0.13 mum; voltage-controlled oscillators; CMOS technology; Circuit optimization; Circuit topology; Delay; Feedforward systems; Frequency; Impedance; Phase noise; Ring oscillators; Tuning; CMOS ring oscillator VCO; High tuning range; Phase noise; Voltage controlled oscillator (VCO); composite load;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770273
