A linear GaN UHF SSPA with record high efficiency

Author

Katz, Allen ; Eggleston, Brian ; McGee, David

Author_Institution

Coll. of New Jersey, Ewing, NJ, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

769

Lastpage

772

Abstract

This paper discusses a highly efficient linear UHF solid state power amplifier (SSPA) developed for avionics and space applications. Predistortion linearization combined with high-voltage gallium nitride (GaN) FET technology allows the simultaneous achievement of both linearity and record high linear efficiency (70%). This amplifier will produce over 100 W of linear output power as well as a power added efficiency (PAE) at saturation approaching 90 percent. This paper describes the power amplifier design approach and presents measured test data.

Keywords

UHF power amplifiers; avionics; field effect transistors; gallium compounds; linearisation techniques; avionics; high-voltage gallium nitride FET technology; linear GaN UHF SSPA; linear UHF solid state power amplifier; linear output power; power added efficiency; power amplifier design; predistortion linearization; space applications; Aerospace electronics; FETs; Gallium nitride; High power amplifiers; III-V semiconductor materials; Linearity; Power amplifiers; Predistortion; Solid state circuits; Space technology; GaN power amplifiers; UHF power amplifiers; high efficiency; linearizers; predistortion; satellite amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165810

Filename

5165810