Title :
A linear GaN UHF SSPA with record high efficiency
Author :
Katz, Allen ; Eggleston, Brian ; McGee, David
Author_Institution :
Coll. of New Jersey, Ewing, NJ, USA
Abstract :
This paper discusses a highly efficient linear UHF solid state power amplifier (SSPA) developed for avionics and space applications. Predistortion linearization combined with high-voltage gallium nitride (GaN) FET technology allows the simultaneous achievement of both linearity and record high linear efficiency (70%). This amplifier will produce over 100 W of linear output power as well as a power added efficiency (PAE) at saturation approaching 90 percent. This paper describes the power amplifier design approach and presents measured test data.
Keywords :
UHF power amplifiers; avionics; field effect transistors; gallium compounds; linearisation techniques; avionics; high-voltage gallium nitride FET technology; linear GaN UHF SSPA; linear UHF solid state power amplifier; linear output power; power added efficiency; power amplifier design; predistortion linearization; space applications; Aerospace electronics; FETs; Gallium nitride; High power amplifiers; III-V semiconductor materials; Linearity; Power amplifiers; Predistortion; Solid state circuits; Space technology; GaN power amplifiers; UHF power amplifiers; high efficiency; linearizers; predistortion; satellite amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165810
