DocumentCode
2553788
Title
Capacitive pressure sensors based on MEMS, operating in harsh environments
Author
Hezarjaribi, Y. ; Hamidon, M.N. ; Keshmiri, S.H. ; Bahadorimehr, A.R.
Author_Institution
Golestan Univ., Gorgan
fYear
2008
fDate
25-27 Nov. 2008
Firstpage
184
Lastpage
187
Abstract
Poly-crystalline silicon carbide (polysic) Micro-electromechanical systems (MEMS) capacitive pressure sensors operating at harsh environments (e.g. high temperature) are proposed because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties. The principle of this paper is, design, simulation. The application of SiC pressure sensors are in a harsh environments such as automotive industries, aerospace, oil/logging equipments, nuclear station, power station. The sensor demonstrated a high temperature sensing capability up to 400degC, the device achieves a linear characteristic response and consists of a circular clamped-edges poly-sic diaphragm suspended over sealed cavity on a silicon carbide substrate. The sensor is operating in touch mode capacitive pressure sensor, The advantages of a touch mode are the robust structure that make the sensor to withstand harsh environment, near linear output, and large over-range protection, operating in wide range of pressure, higher sensitivity than the near linear operation in normal mode, so in this case some of stray capacitance effects can be neglected.
Keywords
capacitive sensors; microsensors; pressure sensors; silicon compounds; MEMS; SiC; capacitive pressure sensors; chemical inertness properties; electrical stability; harsh environments; mechanical robustness; microelectromechanical systems; polycrystalline silicon carbide; Aerospace industry; Capacitive sensors; Chemical sensors; Mechanical sensors; Micromechanical devices; Robust stability; Sensor phenomena and characterization; Silicon carbide; Tactile sensors; Temperature sensors; MEMS; PSG; Touch mode Capacitive pressure sensor; harsh environment; high-temperature; polycrystalline silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location
Johor Bahru
Print_ISBN
978-1-4244-3873-0
Electronic_ISBN
978-1-4244-2561-7
Type
conf
DOI
10.1109/SMELEC.2008.4770304
Filename
4770304
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