DocumentCode :
2553788
Title :
Capacitive pressure sensors based on MEMS, operating in harsh environments
Author :
Hezarjaribi, Y. ; Hamidon, M.N. ; Keshmiri, S.H. ; Bahadorimehr, A.R.
Author_Institution :
Golestan Univ., Gorgan
fYear :
2008
fDate :
25-27 Nov. 2008
Firstpage :
184
Lastpage :
187
Abstract :
Poly-crystalline silicon carbide (polysic) Micro-electromechanical systems (MEMS) capacitive pressure sensors operating at harsh environments (e.g. high temperature) are proposed because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties. The principle of this paper is, design, simulation. The application of SiC pressure sensors are in a harsh environments such as automotive industries, aerospace, oil/logging equipments, nuclear station, power station. The sensor demonstrated a high temperature sensing capability up to 400degC, the device achieves a linear characteristic response and consists of a circular clamped-edges poly-sic diaphragm suspended over sealed cavity on a silicon carbide substrate. The sensor is operating in touch mode capacitive pressure sensor, The advantages of a touch mode are the robust structure that make the sensor to withstand harsh environment, near linear output, and large over-range protection, operating in wide range of pressure, higher sensitivity than the near linear operation in normal mode, so in this case some of stray capacitance effects can be neglected.
Keywords :
capacitive sensors; microsensors; pressure sensors; silicon compounds; MEMS; SiC; capacitive pressure sensors; chemical inertness properties; electrical stability; harsh environments; mechanical robustness; microelectromechanical systems; polycrystalline silicon carbide; Aerospace industry; Capacitive sensors; Chemical sensors; Mechanical sensors; Micromechanical devices; Robust stability; Sensor phenomena and characterization; Silicon carbide; Tactile sensors; Temperature sensors; MEMS; PSG; Touch mode Capacitive pressure sensor; harsh environment; high-temperature; polycrystalline silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
Type :
conf
DOI :
10.1109/SMELEC.2008.4770304
Filename :
4770304
Link To Document :
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