• DocumentCode
    2554021
  • Title

    First resonance frequency and high sensitivity for MEMS acoustic sensors

  • Author

    Ganji, Bahram Azizollah ; Majlis, Burhanuddin Yeop ; Rastegar, Saeed

  • Author_Institution
    Dept. of Electr. Eng., Babol Univ. of Technol., Babol
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    239
  • Lastpage
    244
  • Abstract
    In this paper, the first resonance frequency of the clamped square diaphragm of the capacitive acoustic sensor has been calculated using variational iteration method (VIM). The equivalent electrical circuit model using lumped parameters has been used to obtain the sensitivity of the sensor. The aim is to develop the microphones with high sensitivity and flat frequency response in hearing range. The high sensitivity can be obtained by changing the initial stress of diaphragm, sigmar, diaphragm size, a, diaphragm thickness, t, back plate thickness, h, air gap thickness, d, back plate hole radius, r, surface area fraction occupied by the holes, a., and bias voltage. The optimized structure has a diaphragm thickness of 0.8 mum, a diaphragm area of 2.43 mm2, an air gap of 4.0 mum and a 1.0 mum thick back plate with acoustical ports. The device shows maximum sensitivity 47.9mV/Pa, with a high frequency response extending to 18 kHz.
  • Keywords
    acoustic devices; air gaps; equivalent circuits; iterative methods; microphones; microsensors; MEMS acoustic sensors; air gap thickness; back plate hole radius; back plate thickness; capacitive acoustic sensor; clamped square diaphragm; diaphragm size; diaphragm thickness; equivalent electrical circuit model; frequency 18 kHz; microphones; resonance frequency; sensor sensivity; size 0.8 mum; size 1.0 mum; size 4.0 mum; variational iteration method; Acoustic sensors; Auditory system; Circuits; Frequency response; Micromechanical devices; Microphones; Resonance; Resonant frequency; Stress; Voltage; Acoustic sensor; MEMS; Resonance frequency; Sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770315
  • Filename
    4770315