Study of the performance of the (In0.1Ga0.9N/SiC/Si) solar cells

This study, the performance of the (In_0.1Ga_0.9N/SiC/Si) solar cell was theoretically designed and investigated. The design and performance evaluated by developing simulation models that are included in our simulator (ISE TCD). The limitation of the current versus voltage and efficiency values will be discuss and analyze. The calculation of current and voltage has been done under AM 1.5 with doping concentration levels of 1times10¹⁸ and 5times10¹⁷ cm^-3 of p-type and n-type, respectively. Mole fraction of In_xGa_1-xN alloy and shape of structure were carried out and investigated in this study. Our results indicate that the (In_0.1Ga_0.9N/SiC/Si) alloy have interesting performance for tandem cells application, to be competitive with the conventional energy source the efficiency of solar cell must be improved. Practically, there is a very little range of materials that could be used to make these cells. However, the enhancement in Voc was observed for the lower values of the resistivity, thickness and high minority carriers lifetimes with high diffusion length.