Title :
A proposed low-offset sense amplifier for SRAM applications
Author :
Gundu, Anil Kumar ; Singh, Wazir ; Divi, Sai Manoj
Author_Institution :
Dept. of ECE, IIIT-Delhi, Delhi, India
Abstract :
Random variations play a critical role in determining SRAM yield, by affecting both the bitcell and the read Sense Amplifiers (SA). A low-offset sense amplifier capable of static random access memory (SRAM) applications has been presented in this work. Simulated results show that the proposed sense amplifier has very low offset of 31.284 mV compared to the conventional sense amplifiers.
Keywords :
SRAM chips; amplifiers; SA; SRAM yield applications; bitcell; proposed low-offset read sense amplifier; random variations; static random access memory applications; voltage 31.284 mV; CMOS integrated circuits; Delays; Discharges (electric); Logic gates; Random access memory; Sensors; Transistors; Delay; Offset; SRAM (Static Random Access Memory); Sense Amplifier (SA);
Conference_Titel :
Signal Processing and Integrated Networks (SPIN), 2015 2nd International Conference on
Conference_Location :
Noida
Print_ISBN :
978-1-4799-5990-7
DOI :
10.1109/SPIN.2015.7095420
