Title :
Modeling PIN diodes for high power RF and microwave applications
Author :
Caverly, Robert H.
Author_Institution :
ECE Dept., Villanova Univ., Villanova, PA, USA
Abstract :
A detailed numerical model that integrates DC forward current, emitter recombination and I-region width and radius for simulation of PIN diodes used at high power levels is presented. Details on the model are provided so that easy implementation by the reader may be performed. It is shown that for certain PIN diode geometries, the analytic methods can underestimate the surface recombination current and overestimate the overall I-region charge density. The model is verified with experimental data showing the deviations from ideal 1/IDC at high current injection.
Keywords :
charge injection; electron density; microwave switches; p-i-n diodes; DC forward current; PIN diode geometry; PIN diodes; charge density; emitter recombination; high current injection; high power RF; high power microwave; surface recombination current; Charge carrier lifetime; Communication switching; Current density; Diodes; Impedance; Microwave communication; Power system modeling; Radiative recombination; Radio frequency; Switches; Diodes; Microwave switches; Modeling; UHF switches;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165842
