Modeling PIN diodes for high power RF and microwave applications

Author

Caverly, Robert H.

Author_Institution

ECE Dept., Villanova Univ., Villanova, PA, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

897

Lastpage

900

Abstract

A detailed numerical model that integrates DC forward current, emitter recombination and I-region width and radius for simulation of PIN diodes used at high power levels is presented. Details on the model are provided so that easy implementation by the reader may be performed. It is shown that for certain PIN diode geometries, the analytic methods can underestimate the surface recombination current and overestimate the overall I-region charge density. The model is verified with experimental data showing the deviations from ideal 1/I_DC at high current injection.

Keywords

charge injection; electron density; microwave switches; p-i-n diodes; DC forward current; PIN diode geometry; PIN diodes; charge density; emitter recombination; high current injection; high power RF; high power microwave; surface recombination current; Charge carrier lifetime; Communication switching; Current density; Diodes; Impedance; Microwave communication; Power system modeling; Radiative recombination; Radio frequency; Switches; Diodes; Microwave switches; Modeling; UHF switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165842

Filename

5165842