Title :
SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode
Author :
Menon, P. Susthitha ; Kandiah, Kumarajah ; Shaari, Sahbudin
Author_Institution :
Photonics Technol. Lab. (PTL), Inst. of Micro Eng. & Nanoelectron. (IMEN)
Abstract :
The In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) is a a cheap and affordable device to meet growing demands of optical communication networks operating at speeds below 10 Gbps. A ILPP model utilizing In0.53Ga0.47As as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical equation was developed to predict the signal-to-noise (SNR) ratio of ILPP devices as a function of design factors. The analytical equation was used to predict SNR values for experimentally developed devices from the literature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication; p-i-n photodiodes; In0.53Ga0.47As; SNR prediction model; fractional factorial design; interdigitated lateral p-i-n photodiode; optical communication networks; signal-to-noise ratio; Equations; Fingers; Indium gallium arsenide; Optical fiber communication; PIN photodiodes; Predictive models; Semiconductor device noise; Signal to noise ratio; Substrates; US Department of Energy;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770326
