Design and modeling of a vertical-cavity surface-emitting laser (VCSEL)

Author

Kandiah, Kumarajah ; Menon, P. Susthitha ; Shaari, Sahbudin ; Majlis, Burhanuddin Yeop

Author_Institution

Fac. of Eng., Dept. of Electr., Electron. & Syst. Eng., Univ. Kebangsaan Malaysia, Bangi

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

297

Lastpage

301

Abstract

In this paper, we attempt to design, simulate and characterize an InGaAs-based vertical-cavity surface-emitting laser (VCSEL) employing InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors using an industrial-based numerical simulator. We were able to obtain a working model at an optical wavelength of 1.55 mum. This paper provides key results of the device characteristics including the DC V-I and the light power versus electrical current. Effect of DBR mirror stack quantities were also experimented with and the results are reported here.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; quantum well lasers; semiconductor device models; surface emitting lasers; DC V-I characteristics; InGaAsP-AlGaAs-GaAs-AlAs; VCSEL; distributed Bragg reflectors; electrical current; light power; mirror stack; multi-quantum wells; vertical-cavity surface-emitting laser; wavelength 1.55 mum; Charge carrier processes; Design engineering; Distributed Bragg reflectors; Equations; Gallium arsenide; Laser modes; Optical design; Optical surface waves; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770327

Filename

4770327