Title :
Design optimization of GaInNAs quantum wells for long wavelength VCSEL
Author :
Alias, Mohd Sharizal ; Maulud, Mohd Fauzi ; Mitani, Sufian ; Shaari, Sahbuddin ; Manaf, Nor Azlian Abd
Author_Institution :
Telekom Malaysia Res.&Dev., TMR&D Innovation Centre, Cyberjaya
Abstract :
Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere operating current and single-mode emission at 1310 nm wavelength.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; surface emitting lasers; GaInNAs; VCSEL; design optimization; double intracavity device structure; material composition; material gain; quantum wells; vertical-cavity surface-emitting laser; wavelength 1310 nm; Composite materials; Design optimization; Distributed Bragg reflectors; Fiber lasers; Gallium arsenide; Nitrogen; Optical materials; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770330
