Title :
High efficiency Class-E tuned Doherty amplifier using GaN HEMT
Author :
Choi, Gil Wong ; Kim, Hyoung Jong ; Hwang, Woong Jae ; Shin, Suk Woo ; Choi, Jin Joo ; Ha, Sung Jae
Author_Institution :
Kwangwoon Univ., Seoul, South Korea
Abstract :
This paper describes the design and fabrication of a highly efficient switching-mode class-E Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT) for S-band radar applications. Measured results of the Doherty amplifier show power-added efficiency (PAE) and drain efficiency of 62.6% and 73.1% at 37 dBm of 6 dB output back-off point from saturated output power at 2.85 GHz, compared with PAE and drain efficiency of 42.9% and 44.7% for the case of balanced amplifier. It was found that PAE was improved by 19.7% by adopting the Doherty efficiency enhancement technique.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; radar; Doherty efficiency enhancement technique; GaN; S-band radar applications; gallium nitride high-electron mobility transistor; power-added efficiency; switching-mode class-E Doherty power amplifier; Fabrication; Gallium nitride; HEMTs; High power amplifiers; III-V semiconductor materials; MODFETs; Power amplifiers; Power generation; Power measurement; Radar applications; Doherty amplifier; GaN HEMT; efficiency; switching-mode Class-E amplifier;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165849
