An 8 – 18 GHz wideband SiGe BiCMOS low noise amplifier

Author

Ma, Desheng ; Dai, Fa Foster ; Jaeger, Richard C. ; Irwin, J. David

Author_Institution

Auburn Univ., Auburn, AL, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

929

Lastpage

932

Abstract

In this paper, an 8 - 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-mum SiGe BiCMOS technology was presented. The LNA achieves 16-dB of gain with 1.5 dB variation over the 8 GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8 GHz and increases to 6 dB at 18 GHz. The measured IIP3 is -15-dBm with 17 mA total current consumption from 2.2 V supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; broadband networks; low noise amplifiers; SiGe; active balun; current 17 mA; frequency 8 GHz to 18 GHz; minimum noise figure; noise figure 5 dB; size 0.13 mum; total current consumption; voltage 2.2 V; wideband BiCMOS low noise amplifier; Acoustic reflection; Active noise reduction; BiCMOS integrated circuits; Broadband amplifiers; Frequency; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Silicon germanium; BiCMOS; Ku-band; Low noise amplifier; SiGe; X-band; active balun; linearity; resistive feedback; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165850

Filename

5165850