Title :
An 8 – 18 GHz wideband SiGe BiCMOS low noise amplifier
Author :
Ma, Desheng ; Dai, Fa Foster ; Jaeger, Richard C. ; Irwin, J. David
Author_Institution :
Auburn Univ., Auburn, AL, USA
Abstract :
In this paper, an 8 - 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-mum SiGe BiCMOS technology was presented. The LNA achieves 16-dB of gain with 1.5 dB variation over the 8 GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8 GHz and increases to 6 dB at 18 GHz. The measured IIP3 is -15-dBm with 17 mA total current consumption from 2.2 V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; baluns; broadband networks; low noise amplifiers; SiGe; active balun; current 17 mA; frequency 8 GHz to 18 GHz; minimum noise figure; noise figure 5 dB; size 0.13 mum; total current consumption; voltage 2.2 V; wideband BiCMOS low noise amplifier; Acoustic reflection; Active noise reduction; BiCMOS integrated circuits; Broadband amplifiers; Frequency; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Silicon germanium; BiCMOS; Ku-band; Low noise amplifier; SiGe; X-band; active balun; linearity; resistive feedback; wideband;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165850
