Title :
Multi-finger gate ISFET (Mf-ISFET) for pH sensor application.
Author :
Rani, Rozina Abdul ; Syono, Mohd Ismahadi ; Ramli, Asma Sahirah
Author_Institution :
Microfluidics & BioMEMS, MIMOS Berhad, Kuala Lumpur
Abstract :
Study on Ion Sensitive Field Effect Transistor (ISFET) based on multi-finger gate design is presented. Mf-ISFET was fabricated by using commercial submicron 1.0 mum CMOS technology and deposited with PECVD Si3N4 as a sensing membrane. The electrical data such as IdVd and IdVg of ISFET are measured to identify the behaviours of ISFET. Furthermore, the evaluation test on ISFET performance such as transient analysis and hysteresis is also done and discussed in this paper. Based on experimental result gained, better performance of ISFET can be archived by ldquoconditioningrdquo the ISFET before applying it as a sensor.
Keywords :
CMOS integrated circuits; chemical sensors; ion sensitive field effect transistors; pH measurement; plasma CVD; silicon compounds; CMOS technology; PECVD; hysteresis; ion sensitive field effect transistor; multifinger gate ISFET; pH sensor; transient analysis; Biosensors; CMOS technology; Circuits; Electric variables measurement; Electrodes; Epoxy resins; Hysteresis; Packaging; Silicon; Voltage;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770339
