Title :
An experimental study of switching GaN FETs in a coaxial transmission line
Author :
Joannou, A.J.L. ; Pentz, D.C. ; van Wyk, J.D. ; de Beer, A.S.
Author_Institution :
Univ. of Johannesburg, Johannesburg, South Africa
Abstract :
The switching characteristics of GaN FETs have not yet been measured accurately because of their small electromagnetic size in relation to the circuit and the electromagnetic environment the measurements are exposed to. Switching GaN FETs in a transmission line will allow for measurements to be taken in an electromagnetically defined environment. The transmission line is adapted to take optimum measurements. This is proven by the waveforms presented.
Keywords :
III-V semiconductors; gallium compounds; power field effect transistors; power transmission lines; wide band gap semiconductors; coaxial transmission line; electromagnetic size; power semiconductor device; switching GaN FET; Electromagnetics; Field effect transistors; Gallium nitride; Power transmission lines; Switches; Transmission line measurements; Voltage measurement; Component for Measurements; Device Characterization; Device application; Emerging Technology; Gallium Nitride(GaN); Measurement; Power semiconductor device;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910756
