Title :
A Drive-by-Microwave isolated gate driver with gate current charge for IGBTs
Author :
Nagai, Shuichi ; Kawai, Yusuke ; Tabata, Osamu ; Fujiwara, H. ; Negoro, Noboru ; Ishida, Makoto ; Otsuka, N.
Author_Institution :
Panasonic Corp., Moriguchi, Japan
Abstract :
A new Drive-by-Microwave (DBM) isolated gate driver with gate current charge is presented, which drives an IGBT without an isolated power supply by switching the charged current through a microwave wireless power transmission. The fabricated compact DBM gate driver outputs an isolated gate voltage of 15V and successfully demonstrated the 300A-IGBT drive with the 2.0A peak gate current. Furthermore, the fabricated DBM gate driver realizes a 100V and 5.0MHz high-speed switching of a GaN power device without photo couplers and bulky transformers.
Keywords :
III-V semiconductors; gallium compounds; inductive power transmission; insulated gate bipolar transistors; microwave power transmission; microwave transistors; power bipolar transistors; wide band gap semiconductors; GaN; IGBT; bulky transformers; current 2 A; current 300 A; drive-by-microwave isolated gate driver; frequency 5 MHz; gate current charge; high-speed switching; isolated power supply; microwave wireless power transmission; photo couplers; power device; voltage 100 V; voltage 15 V; Capacitors; Couplers; Logic gates; Radio frequency; Receivers; Switches; Transmitters; Drive; Gallium Nitride(GaN); IGBT; integrated circuit(IC); wireless power transmission;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910757
