Title :
Influence of conformal nitride material impacting the OTP & MTP data retention performance
Author :
Gek, Hee Eng ; Jiew, Chee Boon ; Chien, Alexander Tan Chuan ; Sewoon, Seok
Author_Institution :
X-FAB Sarawak Sdn. Bhd., Kuching
Abstract :
Experimental condition of thin SAB Oxide around 350Aring coupling with 400Aring Contact SiON film has exhibited the worst data retention behavior in One Time Programmable (OTP) & Multiple Time Programmable (MTP) memory device. Another alternative solution has been explored to improve the data retention characteristic by replacing the 400Aring silicon oxynitride (SiON) contact stopper with 300Aring silicon nitride (SiN) material. A convincing results was demonstrated in the combination of 350Aring SAB Oxide with 300Aring Contact SiN film, although the combination of thicker SAB Oxide up to 1600Aring with 400Aring Contact SiON film is still feasible with the existence of some undesirable leakage behaviors inherited from SAB plasma dry etch process in OTP cell architecture. On the other hand, the MTP cell must use Contact SiN film as contact etch stopper to achieve the data retention performance due to array design architecture.
Keywords :
dielectric thin films; programmable logic arrays; silicon compounds; sputter etching; SiON; array design architecture; contact etch stopper; contact film; data retention; leakage behaviors; multiple time programmable device; one time programmable memory device; plasma dry etch; size 1600 A; size 300 A; size 350 A; size 400 A; Contacts; Dry etching; Foundries; Logic arrays; Logic devices; Plasma applications; Plasma devices; Process design; Silicon compounds; Tensile stress;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770346
