DocumentCode
2554712
Title
Lumped element thermal modeling of GaN-Based HEMTs
Author
Bertoluzza, Fulvio ; Sozzi, Giovanna ; Delmonte, Nicola ; Menozzi, Roberto
Author_Institution
Dept. of Inf. Eng., Univ. of Parma, Parma, Italy
fYear
2009
fDate
7-12 June 2009
Firstpage
973
Lastpage
976
Abstract
This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation for circuit modeling and reliability estimation. A physical-level lumped element dynamic thermal network able to describe the two-dimensional device geometry is self-consistently coupled with an electro-thermal compact large-signal model. The results obtained with the lumped-element thermal network are compared with finite-element simulations and shown to provide valuable estimates of the thermal behavior of very large 2D structures.
Keywords
HEMT integrated circuits; finite element analysis; gallium compounds; integrated circuit modelling; integrated circuit reliability; thermal analysis; GaN-based HEMT; circuit modeling; circuit reliability estimation; electro-thermal compact large-signal model; finite-element simulations; lumped element thermal modeling; lumped-element thermal network; physical-level lumped element dynamic thermal network; self-consistent electro-thermal simulation; thermal behavior; Aluminum gallium nitride; Circuit simulation; Fingers; Gallium nitride; HEMTs; Heating; MODFETs; Mathematical model; Solid modeling; Thermal resistance; Gallium compounds; MODFETs; Microwave FETs; Modeling; Reliability; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location
Boston, MA
ISSN
0149-645X
Print_ISBN
978-1-4244-2803-8
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2009.5165861
Filename
5165861
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