• DocumentCode
    2554712
  • Title

    Lumped element thermal modeling of GaN-Based HEMTs

  • Author

    Bertoluzza, Fulvio ; Sozzi, Giovanna ; Delmonte, Nicola ; Menozzi, Roberto

  • Author_Institution
    Dept. of Inf. Eng., Univ. of Parma, Parma, Italy
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Firstpage
    973
  • Lastpage
    976
  • Abstract
    This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation for circuit modeling and reliability estimation. A physical-level lumped element dynamic thermal network able to describe the two-dimensional device geometry is self-consistently coupled with an electro-thermal compact large-signal model. The results obtained with the lumped-element thermal network are compared with finite-element simulations and shown to provide valuable estimates of the thermal behavior of very large 2D structures.
  • Keywords
    HEMT integrated circuits; finite element analysis; gallium compounds; integrated circuit modelling; integrated circuit reliability; thermal analysis; GaN-based HEMT; circuit modeling; circuit reliability estimation; electro-thermal compact large-signal model; finite-element simulations; lumped element thermal modeling; lumped-element thermal network; physical-level lumped element dynamic thermal network; self-consistent electro-thermal simulation; thermal behavior; Aluminum gallium nitride; Circuit simulation; Fingers; Gallium nitride; HEMTs; Heating; MODFETs; Mathematical model; Solid modeling; Thermal resistance; Gallium compounds; MODFETs; Microwave FETs; Modeling; Reliability; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
  • Conference_Location
    Boston, MA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-2803-8
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2009.5165861
  • Filename
    5165861