Title :
Dynamic models for predicting the thermal behavior of vertical MOSFET transistors under pulsed conditions
Author :
Rice, D. ; Crowder, J. ; Battaglia, B.
Author_Institution :
HVVi Semicond., Inc., Phoenix, AZ, USA
Abstract :
This paper describes a method for calculating the thermal resistance of a vertical MOSFET power amplifier. The method for measuring the thermal resistance under a given set of input conditions is given. From this data a thermal transient model with the thermal resistance and capacitance parameters is created. This model can be utilized to determine the thermal resistance of any input signal condition. This model compares well to a physical based, finite element model that is used to investigate physical changes to the device structure.
Keywords :
MOSFET; finite element analysis; power amplifiers; thermal resistance; MOSFET power amplifier; capacitance parameters; finite element model; signal condition; thermal behavior prediction; thermal resistance calculation; thermal transient model; vertical MOSFET transistors; Electrical resistance measurement; Heating; Immune system; MOSFET circuits; Packaging; Predictive models; Semiconductor diodes; Temperature measurement; Thermal resistance; Voltage; power amplifiers; power transistors;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165864
