DocumentCode :
2554796
Title :
Study of chemical staining on metallization for SEM image quality effect improvement
Author :
Fong, Chan Sieng ; Seng, Ng Hong
Author_Institution :
X-FAB Sarawak Sdn. Bhd., Kuching
fYear :
2008
fDate :
25-27 Nov. 2008
Firstpage :
410
Lastpage :
413
Abstract :
Chemical staining is commonly used to delineate sample for construction analysis. A wide range of wet etchants are available such as acid-based, alkaline-based solutions and organic solvents. Etch artifacts and over-etched profile maybe observed after wet staining on metal profile. Wet chemical treatment is also essential after dry etching during RIE delayering to reveal metallization of interest. The plasma residue on metal surface should be eliminated to enable accurate metal profile inspection. In this paper, the impact of different wet chemical solutions on SEM image quality is presented. Construction analysis and delayering were focused on metallization.
Keywords :
automatic optical inspection; civil engineering computing; construction; metallisation; scanning electron microscopy; sputter etching; RIE delayering; SEM image quality effect improvement; acid-based solutions; alkaline-based solutions; chemical staining; construction analysis; dry etching; metal profile inspection; metallization; organic solvents; wet chemical treatment; wet etchants; Chemical analysis; Delay; Dry etching; Image quality; Metallization; Plasma applications; Plasma chemistry; Solvents; Surface treatment; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
Type :
conf
DOI :
10.1109/SMELEC.2008.4770352
Filename :
4770352
Link To Document :
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