Title :
High Current batch Implanter Accelerator Column particle reduction
Author :
Chiong, Tiong Ung ; Jun, Huang Cai ; Bustamyudin ; Young, Park Ju ; Ming, Yong ; Meng, Loi Chee ; Loh, SL ; Zhao, Zhiyong
Author_Institution :
X-FAB Sarawak Sdn. Bhd, Kuching
Abstract :
The fast scanning mechanism of High Current batch Implanter is achieved by spinning the wafer disk with angular speed more than 1200 Rotation-Per-Minute (RPM). If particles hit device wafers during implant it can cause serious damage to device structure. Particle generation areas are mainly from Source terminal, Accelerator Column, Plasma Flood Gun (PFG) and beam line wall. Preventive maintenance needs to be carried out adequately for effective particle control. However such practice is difficult for Accelerator Column. Particles from accelerator column are unavoidable especially for implants with high Accelerator Voltage. This paper introduces the defects caused by accelerator column particles and defect reduction technique for accelerator column.
Keywords :
ion beam effects; plasma materials processing; semiconductor devices; accelerator column particle; beam line wall; device wafers; high current batch implanter; particle generation areas; plasma flood gun; scanning mechanism; source terminal; wafer disk; Floods; Implants; Particle accelerators; Particle beams; Plasma accelerators; Plasma devices; Plasma sources; Preventive maintenance; Spinning; Voltage;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770355
