• DocumentCode
    2554843
  • Title

    High Current batch Implanter Accelerator Column particle reduction

  • Author

    Chiong, Tiong Ung ; Jun, Huang Cai ; Bustamyudin ; Young, Park Ju ; Ming, Yong ; Meng, Loi Chee ; Loh, SL ; Zhao, Zhiyong

  • Author_Institution
    X-FAB Sarawak Sdn. Bhd, Kuching
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    422
  • Lastpage
    425
  • Abstract
    The fast scanning mechanism of High Current batch Implanter is achieved by spinning the wafer disk with angular speed more than 1200 Rotation-Per-Minute (RPM). If particles hit device wafers during implant it can cause serious damage to device structure. Particle generation areas are mainly from Source terminal, Accelerator Column, Plasma Flood Gun (PFG) and beam line wall. Preventive maintenance needs to be carried out adequately for effective particle control. However such practice is difficult for Accelerator Column. Particles from accelerator column are unavoidable especially for implants with high Accelerator Voltage. This paper introduces the defects caused by accelerator column particles and defect reduction technique for accelerator column.
  • Keywords
    ion beam effects; plasma materials processing; semiconductor devices; accelerator column particle; beam line wall; device wafers; high current batch implanter; particle generation areas; plasma flood gun; scanning mechanism; source terminal; wafer disk; Floods; Implants; Particle accelerators; Particle beams; Plasma accelerators; Plasma devices; Plasma sources; Preventive maintenance; Spinning; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770355
  • Filename
    4770355