Title :
Impact of poly field plate dimension towards LDMOS performance
Author :
Tee, Elizabeth Kho Ching ; Julai, Norhuzaimin ; Hai, Hu Yong ; Pal, Deb Kumar ; Hua, Tia Swee
Author_Institution :
X-FAB Sarawak Sdn. Bhd, Kuching
Abstract :
Rapid increasing demand towards high voltage MOSFETs device integrated in low voltage CMOS analog and digital circuits for automobile and power management application has driven the development of 0.18 um high voltage lateral diffused MOSFET (LDMOS) which capable to have 80 V breakdown voltage. During designing this high voltage LDMOS, it is observed that the device performance is very dependent towards the device geometry particularly poly overlap length on STI. Thus, in this paper, the effects of poly overlap length on STI plate for high voltage LDNMOS have been studied extensively during the off-state condition.
Keywords :
MOSFET; impact ionisation; semiconductor device breakdown; LDNMOS transistor; breakdown voltage; high voltage MOSFETs; impact ionization; off-state condition; poly field plate dimension; poly overlap length; Analytical models; Automobiles; Breakdown voltage; Circuits; Electric resistance; Immune system; Low voltage; MOSFETs; Medical simulation; Surface resistance; LDMOS; Poly field plate; RESURF; simulation;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770358
