A novel multizone doped and multistep oxide high breakdown voltage lateral bipolar transistor on SOI

A two dimensional numerical simulation of a novel lateral bipolar junction transistor (LBJT) on silicon-on-insulator (SOI) is performed. The novelty of the device is the use of multistep doped drift region and mutistep buried oxide. The steps in doping and steps in oxide thickness have been used as a replacement for linearly varying drift doping and linearly varying oxide thickness. Numerical simulation has demonstrated that the breakdown voltage of the proposed device with two zone step doped (TZSD) drift region is ~158% higher than the conventional device.