Title :
A novel multizone doped and multistep oxide high breakdown voltage lateral bipolar transistor on SOI
Author :
Loan, Sajad A. ; Qureshi, S. ; Iyer, S. Sundar Kumar
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur
Abstract :
A two dimensional numerical simulation of a novel lateral bipolar junction transistor (LBJT) on silicon-on-insulator (SOI) is performed. The novelty of the device is the use of multistep doped drift region and mutistep buried oxide. The steps in doping and steps in oxide thickness have been used as a replacement for linearly varying drift doping and linearly varying oxide thickness. Numerical simulation has demonstrated that the breakdown voltage of the proposed device with two zone step doped (TZSD) drift region is ~158% higher than the conventional device.
Keywords :
bipolar transistors; electric breakdown; silicon-on-insulator; SOI; multistep doped drift region; multistep oxide high breakdown voltage lateral bipolar transistor; mutistep buried oxide; silicon-on-insulator; two dimensional numerical simulation; two zone step doped drift region; BiCMOS integrated circuits; Bipolar transistors; Doping; Fabrication; Microwave devices; Numerical simulation; Radio frequency; Radiofrequency integrated circuits; Silicon on insulator technology; System-on-a-chip;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770359
