An enhanced physical and scalable lumped model of RF CMOS spiral inductors

Author

Salimy, S. ; Toutain, S. ; Rhallabi, A. ; Goullet, A. ; Saubat, J.-C. ; Challali, F.

Author_Institution

Inst. de Rech. en Electron. et Electrotech. de Nantes Atlantique, Nantes, France

fYear

2009

fDate

7-12 June 2009

Firstpage

1017

Lastpage

1020

Abstract

An enhanced scalable compact model for on-chip RF spiral inductors is presented in this paper. By considering the layout and technology parameters under quasi-static approximation, the model elements are all expressed analytically and based on physics assumption. The proposed approach improves the accuracy of the previous physical based scalable model, and considers the frequency dependant behavior of spiral inductors such as the substrate coupling, the skin and proximity effect.

Keywords

CMOS integrated circuits; inductors; radiofrequency integrated circuits; scaling circuits; frequency dependant behavior; on-chip RF CMOS spiral inductors; radio frequency integrated circuits; scalable lumped model; CMOS technology; Coupling circuits; Inductance; Inductors; Proximity effect; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Silicon; Spirals; CMOS; Inductor Model; Physical Model; Spiral Inductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165872

Filename

5165872