Title :
BSIM-IMG with improved surface potential calculation recipe
Author :
Kushwaha, P. ; Yadav, C. ; Agarwal, H. ; Chauhan, Y.S. ; Srivatsava, J. ; Khandelwal, S. ; Duarte, J.P. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, Kanpur, India
Abstract :
In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests.
Keywords :
MOSFET; silicon-on-insulator; AC symmetry tests; BSIM-IMG model; C-V characteristics; DC symmetry tests; FDSOI MOSFET; I-V characteristics; LEAP; Low-power Electronics Association and Project; fully depleted silicon on insulator; improved surface potential calculation recipe; model validation; Data models; Large scale integration; Logic gates; MOSFET; Semiconductor device modeling; Silicon;
Conference_Titel :
India Conference (INDICON), 2014 Annual IEEE
Conference_Location :
Pune
Print_ISBN :
978-1-4799-5362-2
DOI :
10.1109/INDICON.2014.7030498
