Title :
A novel Partial SOI power device with step in buried oxide for improvement of breakdown voltage
Author :
Samaneh, Sharbati ; Asghar, Orouji Ali ; Morteza, Fathipour
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Semnan, Semnan
Abstract :
In this paper a new design for conventional Partial SOI (PSOI) structure is proposed, which employs a step in buried oxide of the partial SOI structure. This new structure is called step partial buried oxide structure (SPBOS). The step in the buried oxide produces an additional electric field peak, which decreases the other electric field peaks near the drain and source junctions drastically. Our analysis indicates that the breakdown voltage of SPBOS may be increased by 4-5 times in comparison to conventional SOI.
Keywords :
buried layers; elemental semiconductors; power semiconductor devices; semiconductor device breakdown; semiconductor device models; silicon; silicon-on-insulator; Si; breakdown voltage; drain-source junctions; electric field; partial SOI power device; step partial buried oxide structure; Design engineering; Epitaxial layers; Fabrication; Leakage current; Parasitic capacitance; Power engineering and energy; Power engineering computing; Silicon on insulator technology; Substrates; Temperature;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770372
