A novel Partial SOI power device with step in buried oxide for improvement of breakdown voltage

Author

Samaneh, Sharbati ; Asghar, Orouji Ali ; Morteza, Fathipour

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Semnan, Semnan

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

495

Lastpage

497

Abstract

In this paper a new design for conventional Partial SOI (PSOI) structure is proposed, which employs a step in buried oxide of the partial SOI structure. This new structure is called step partial buried oxide structure (SPBOS). The step in the buried oxide produces an additional electric field peak, which decreases the other electric field peaks near the drain and source junctions drastically. Our analysis indicates that the breakdown voltage of SPBOS may be increased by 4-5 times in comparison to conventional SOI.

Keywords

buried layers; elemental semiconductors; power semiconductor devices; semiconductor device breakdown; semiconductor device models; silicon; silicon-on-insulator; Si; breakdown voltage; drain-source junctions; electric field; partial SOI power device; step partial buried oxide structure; Design engineering; Epitaxial layers; Fabrication; Leakage current; Parasitic capacitance; Power engineering and energy; Power engineering computing; Silicon on insulator technology; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770372

Filename

4770372