Title :
HEMT Transistor Noise modeling using generalized radial basis function
Author :
Hayati, Mohsen ; Shamkhani, Ali ; Rezaei, Abbas ; Seifi, Majid
Author_Institution :
Electr. Eng. Dept., Razi Univ., Kermansshah
Abstract :
In this paper, one important architecture of neural networks named a generalized radial basis function (GRBF) is applied in order to model HEMT transistor noise parameters dependence on bias conditions such as DC drain-to-source voltage, DC drain-to-source current, frequency and S-parameters that can accurately predict transistor noise parameters in a wide frequency ranges for all bias points from the operating range including transistor S-parameters.
Keywords :
S-parameters; electronic engineering computing; high electron mobility transistors; radial basis function networks; semiconductor device models; semiconductor device noise; GRBF; HEMT transistor noise modeling; generalized radial basis function; neural networks; transistor S-parameter; Acoustic reflection; Circuit noise; Frequency; HEMTs; Kernel; Microwave transistors; Neural networks; Noise figure; Optimized production technology; Radial basis function networks; Generalized Radial Basis Function; HEMT Transistor; S-Parameters;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770376
