Title :
Optical band gap and lattice constant of CdxZn1-x SeyS1-y thin film alloys for heterojunction photovoltaic cells
Author :
Noufi, Rommel ; Tuttle, John ; Albin, David ; Contreras, Miguel ; Carapella, Jeff ; Mason, Alice ; Tennant, Andrew
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
The fabrication and characterization of thin film quaternary alloys of CdxZn1-xSeyS1-y from combinations of the II-VI binaries are discussed. Measurements were made of optical bandgaps and lattice constants of the quaternary alloys by spectrophotometry and X-ray diffractometry, respectively, as a function of composition. The optical bandgaps range from 1.68 to 3.66 eV, and the lattice constants range from 5.41 to 6.05 Å. A matrix of optical bandgaps and lattice constants for the quaternary alloys is presented, from which one can choose a junction partner for a given absorber in a heterojunction photovoltaic cell
Keywords :
X-ray diffraction examination of materials; cadmium compounds; energy gap; optical testing; p-n heterojunctions; selenium compounds; semiconductor device testing; semiconductor thin films; solar cells; spectrophotometry; zinc compounds; 1.68 to 3.66 eV; CdxZn1-xSeyS1-y solar cells; X-ray diffractometry; characterization; fabrication; heterojunction; lattice constant; optical bandgaps; quaternary alloys; semiconductor device testing; spectrophotometry; thin film; Heterojunctions; Lattices; Optical device fabrication; Optical diffraction; Optical films; Photonic band gap; Photovoltaic cells; Transistors; X-ray diffraction; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169382
