Title :
MEMS varactor enabled frequency-reconfigurable LNA and PA in the upper UHF band
Author :
Jajoo, Abhishek ; Wang, Leon ; Mukherjee, Tamal
Author_Institution :
Dept. of ECE, Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
A low-power frequency-reconfigurable narrowband LNA and PA have been designed using tunable RF-MEMS passives in a 0.35 mum BiCMOS process. The LNA´s operating frequency varies from 2.7 GHz to 3.1 GHz and the PA´s operating frequency varies from 2.7 GHz to 3.2 GHz (using the current 2.5:1 varactor tuning range; next generation varactors have 6.9:1 tuning range). With only 2.5 mW of power the LNA attains (S21, NF) of (7.7 dB, 4.2 dB) at 2.7 GHz and (10.2 dB, 4.8 dB) at 3.1 GHz. The PA delivers 10.1-13.7 dBm of power and has a PAE of 7.5-17% depending on the frequency.
Keywords :
integrated circuit design; low noise amplifiers; micromechanical devices; power amplifiers; varactors; BiCMOS process; MEMS varactor; drain efficiency; frequency 2.7 GHz to 3.1 GHz; frequency-reconfigurable LNA; low noise amplifiers; power 2.5 mW; power added efficiency; power amplifiers; size 0.35 mum; tunable RF-MEMS passives; Actuators; BiCMOS integrated circuits; Inductors; Low-noise amplifiers; Micromechanical devices; Narrowband; Noise figure; Radio frequency; Tuning; Varactors; RF MEMS; drain efficiency; low noise amplifiers; noise figure; power added efficiency; power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165898
