• DocumentCode
    2555536
  • Title

    Characterization of Co-synthesized Titanium and ZnO nanostructures

  • Author

    Ismardi, Abrar ; Dee, C.F. ; Majlis, B.Y. ; Lim, K.P.

  • Author_Institution
    Inst. of Microeng. & Nanoelectron., Univ. Kebangsaan Malaysia, Bangi
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    554
  • Lastpage
    557
  • Abstract
    Pure and ZnO-Ti mixed nanowires were synthesized on a p-type silicon wafer. ZnO powder and Ti were mixed and mechanically milled in a ball milling machine. ZnO-Ti mixed nanowires were grown from the milled powder by using thermal evaporation method. Pure and ZnO-Ti mixed nanowires were grown by vapor solid method, using a furnace at 1000degC on a p-type silicon wafer. Characterizations have been done by FE-SEM, EDX and XRD. FE-SEM micrograph shows that the ZnO-Ti mixed nanowires are utilizing ZnO nanowires as bases to start the growth. Ti nanostructure cannot grow directly on the substrate. The segregative growth of Ti and ZnO nanowires describe the difficulty of incorporating Ti into ZnO nanowires.
  • Keywords
    II-VI semiconductors; X-ray chemical analysis; finite element analysis; nanowires; scanning electron microscopy; titanium; zinc compounds; EDX; FE-SEM; XRD; ZnO-Ti; nanostructures; nanowires; p-type silicon wafer; temperature 1000 degC; thermal evaporation method; vapor solid method; Ball milling; Furnaces; Nanostructures; Nanowires; Powders; Silicon; Solids; Titanium; X-ray scattering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770386
  • Filename
    4770386