DocumentCode
2555536
Title
Characterization of Co-synthesized Titanium and ZnO nanostructures
Author
Ismardi, Abrar ; Dee, C.F. ; Majlis, B.Y. ; Lim, K.P.
Author_Institution
Inst. of Microeng. & Nanoelectron., Univ. Kebangsaan Malaysia, Bangi
fYear
2008
fDate
25-27 Nov. 2008
Firstpage
554
Lastpage
557
Abstract
Pure and ZnO-Ti mixed nanowires were synthesized on a p-type silicon wafer. ZnO powder and Ti were mixed and mechanically milled in a ball milling machine. ZnO-Ti mixed nanowires were grown from the milled powder by using thermal evaporation method. Pure and ZnO-Ti mixed nanowires were grown by vapor solid method, using a furnace at 1000degC on a p-type silicon wafer. Characterizations have been done by FE-SEM, EDX and XRD. FE-SEM micrograph shows that the ZnO-Ti mixed nanowires are utilizing ZnO nanowires as bases to start the growth. Ti nanostructure cannot grow directly on the substrate. The segregative growth of Ti and ZnO nanowires describe the difficulty of incorporating Ti into ZnO nanowires.
Keywords
II-VI semiconductors; X-ray chemical analysis; finite element analysis; nanowires; scanning electron microscopy; titanium; zinc compounds; EDX; FE-SEM; XRD; ZnO-Ti; nanostructures; nanowires; p-type silicon wafer; temperature 1000 degC; thermal evaporation method; vapor solid method; Ball milling; Furnaces; Nanostructures; Nanowires; Powders; Silicon; Solids; Titanium; X-ray scattering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location
Johor Bahru
Print_ISBN
978-1-4244-3873-0
Electronic_ISBN
978-1-4244-2561-7
Type
conf
DOI
10.1109/SMELEC.2008.4770386
Filename
4770386
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