Title :
The effect of annealing temperatures on zinc oxide thin films properties for electronic devices application
Author :
Mamat, M.H. ; Sahdan, M.Z. ; Amizam, S. ; Rafaie, H.A. ; Khusaimi, Z. ; Ahmed, A. Zain ; Abdullah, S. ; Rusop, M.
Author_Institution :
Solar Cell Lab., Univ. Teknol. MARA, Shah Alam
Abstract :
Zinc Oxide (ZnO) thin films were prepared on glass substrates using sol-gel coating method and the effect of annealing temperatures on the ZnO properties were investigated. The Current-Voltage (I-V) measurement shows electrical properties are improved with annealing temperatures. X-ray diffraction (XRD) spectra indicate annealed samples having preferential growth at (002) plane and the structural properties improved at higher annealing temperature. Absorption coefficient of ZnO thin films in ultraviolet (UV) region also improved with annealing temperatures.
Keywords :
II-VI semiconductors; X-ray diffraction; absorption coefficients; annealing; semiconductor growth; semiconductor thin films; sol-gel processing; ultraviolet spectra; wide band gap semiconductors; zinc compounds; (002) plane; X-ray diffraction; ZnO; absorption coefficient; annealing; current-voltage measurement; electronic device application; glass substrates; preferential growth; sol-gel coating; structural property; ultraviolet (UV) region; zinc oxide thin films; Annealing; Coatings; Current measurement; Electric variables measurement; Glass; Temperature; Thin film devices; Transistors; X-ray diffraction; Zinc oxide;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770389
